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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3729 description high collector-emitter breakdown voltage- : v (br)ceo = 800v(min) wide area of safe operation applications designed for tv horizontal def lection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 6 v i c collector current-continuous 5 a i cm collector current-peak 16 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3729 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; r be = 800 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1.25a b 2.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1.25a b 1.5 v i ces collector cutoff current v ce = 1500v; r be = 0 0.5 ma h fe dc current gain i c = 1a; v ce = 5v 8 isc website www.iscsemi.cn 2 |
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